DMN13M9UCA6-7

$0.36

Description：MOSFET 2N-CH X3-DSN3518-6
Series：-

SKU:06774497d3ec Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH X3-DSN3518-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：56.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：3315pF @ 6V
Power - Max：2.67W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：X3-DSN3518-6
Grade：-
Qualification：-

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DMN13M9UCA6-7

Overview

The DMN13M9UCA6-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X3-DSN3518-6 (Type B) CSP package. It features a source-source configuration with a maximum breakdown voltage of 12V and a typical on-resistance of 2.5mΩ at VGS=3.8V. The device supports a continuous current of 23.6A at TA=+25°C and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a gate threshold voltage of 0.5V to 1.3V, total gate charge of 56.5nC, and power dissipation of 1.05W on a minimum pad layout.

Feature Summary

Dual N-channel architecture with integrated ESD protection for the gate terminals
Ultra-low profile design with a height of 0.21mm and footprint of 3.54mm x 1.77mm
Lead-free construction compliant with RoHS directives and free of halogens and antimony

Applications

Battery management systems
Load switching circuits
Battery protection modules

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets the required environmental standards, specifically the lead-free and halogen-free definitions provided by the manufacturer. Ensure the procurement channel is authorized to guarantee product authenticity and traceability.

Selection Notes

Select this component when a low-profile dual N-channel switch is required for 12V applications. The device offers high current capability relative to its small footprint. Evaluate the thermal resistance requirements against the application's duty cycle, as the junction-to-ambient resistance varies significantly based on the PCB copper area utilized during mounting.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs designed for high-efficiency power management. It utilizes Diodes Incorporated's proprietary CSP technology to minimize on-state resistance while maintaining superior switching performance. The device is intended for space-constrained portable electronics and battery-powered devices.