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DMN14M8UFDF-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V U-DFN2020-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN14M8UFDF-13
- Description：MOSFET BVDSS: 8V~24V U-DFN2020-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：12 V
- Current - Continuous Drain (Id) @ 25°C：14.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：29.5 nC @ 10 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1246 pF @ 6 V
- FET Feature：-
- Power Dissipation (Max)：1.1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Single FETs, MOSFETs datasheet and documents for DMN14M8UFDF-13
Single FETs, MOSFETs Overview
The DMN14M8UFDF-13 is a 12V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 12V and a low on-resistance (RDS(ON)) of 6.0mΩ at VGS = 4.5V with a continuous drain current (ID) of 14.7A. At VGS = 2.5V, the RDS(ON) is 9.0mΩ with an ID of 12A. The device operates within a junction temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 package.
Single FETs, MOSFETs Feature Summary
- Designed for high-efficiency power-management applications by minimizing on-state resistance while maintaining superior switching performance.
- Features a 0.6mm profile ideal for low-profile applications with a compact PCB footprint of 4mm².
- Totally lead-free and fully RoHS compliant, halogen and antimony free.
Single FETs, MOSFETs Applications
- General purpose interfacing switches
- Power-management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2, RoHS 3, and REACH requirements. Ensure compatibility with IATF 16949 certified facilities if automotive application standards are required.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a 12V rating with minimal conduction losses. Evaluate thermal management strategies based on the specified thermal resistance values for both ambient and case conditions. Consider the low gate threshold voltage for compatibility with various logic-level drive signals in power management circuits.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is housed in a U-DFN2020-6 (Type F) package, which provides a small form factor suitable for space-constrained electronic designs. The device is intended for general-purpose switching and power management tasks.
Single FETs, MOSFETs Replacement Considerations
Consult official documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure electrical parameters and pin configurations match the original design requirements.
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