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Product Detailed Parameters
- Description：MOSFET 2N-CH 12V 9.8A X4-DSN1815
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel, Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：9.8A (Ta)
- Rds On (Max) @ Id, Vgs：6mOhm @ 4A, 3.3V
- Vgs(th) (Max) @ Id：1.4V @ 870µA
- Gate Charge (Qg) (Max) @ Vgs：21.7nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：1669pF @ 6V
- Power - Max：700mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-SMD, No Lead
- Supplier Device Package：X4-DSN1815-4
- Grade：-
- Qualification：-
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Overview
The DMN15M5UCA4-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a dual-transistor configuration integrated into a compact X4-DSN1815-4 surface-mount package. The device supports a drain-source breakdown voltage (BVDSS) range of 8V to 24V, making it suitable for low-voltage applications. Key electrical characteristics include a continuous drain current of 9.8A and a gate-source voltage rating of ±8V. The component utilizes silicon technology and operates within a temperature range of -55°C to +150°C. It is supplied in tape and reel packaging with a factory quantity of 3,000 units per reel.
Feature Summary
- Dual N-channel enhancement mode MOSFET structure for efficient power switching
- Integrated design reduces board space requirements compared to discrete components
- Optimized for low-voltage DC-DC converter and power management circuits
Applications
- Low-voltage DC-DC converters
- Power management ICs
- Battery protection circuits
Procurement Notes
Verify the specific suffix '4' against the official Diodes Incorporated datasheet to confirm the exact pinout and electrical tolerances associated with this marking code. Ensure that the X4-DSN1815-4 package dimensions match your PCB footprint constraints. Cross-reference the manufacturer part number with authorized distributors to confirm current availability and authenticity, as supply chain statuses may vary.
Selection Notes
Select this component when a dual N-channel configuration is required in a minimal footprint for low-voltage systems. The 9.8A current rating and 8V-24V voltage range define its operational limits. Consider the thermal performance of the DSN1815 package for heat dissipation needs. Compare against single-channel alternatives if only one switch is needed, or other dual packages if higher current density is required.
Part Context
This part belongs to Diodes Incorporated's DMN series of dual MOSFETs. These devices are designed to replace multiple discrete transistors, simplifying circuit design and improving reliability. The series typically offers optimized on-resistance and fast switching speeds for modern portable electronics and industrial control applications requiring compact power solutions.
Replacement Considerations
Consult the official Diodes Incorporated cross-reference guide for verified substitutes. Potential replacements may include other dual N-channel MOSFETs from the same manufacturer with compatible BVDSS and Id ratings. Verify that any alternative part matches the X4-DSN1815-4 footprint and pin assignment to ensure direct compatibility without PCB redesign.
