DMN16M7UCA6-7

Overview

The DMN16M7UCA6-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes an X4-DSN2718-6 package with dimensions of 2.70mm x 1.81mm and a height of 0.12mm. The device features a source-source breakdown voltage (BV_DSS) of 12V and a maximum continuous source current (I_S) of 19.2A at 25°C. The typical static on-resistance (R_DS(ON)) is 3.4mΩ at V_GS = 3.8V. Key electrical parameters include a gate threshold voltage of 0.7V, total gate charge of 45.4nC, and input capacitance of 2333pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• Ultra-low profile CSP footprint measuring 2.70mm x 1.81mm with a height of 0.12mm for space-constrained designs.
• Integrated electrostatic discharge (ESD) protection circuitry on the gate terminal.
• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
• Compliant with RoHS directives and halogen/antimony-free manufacturing standards.

Applications

• Battery management systems
• Load switches
• Battery protection circuits

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per carrier. Confirm that the component meets AEC-Q100/101 qualification requirements if intended for automotive applications requiring specific change control or PPAP capability. Ensure the final assembly process adheres to J-STD-020 moisture sensitivity level 1 guidelines.

Selection Notes

Select this component when a low-profile surface-mount solution is required for 12V DC load switching applications. The 3.4mΩ on-resistance supports high-current loads up to 19.2A in steady-state conditions. Evaluate thermal dissipation capabilities based on the specified junction-to-ambient thermal resistance values for the target PCB copper area and mounting configuration.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It represents a newer generation designed to optimize the balance between low on-resistance and fast switching speeds. The device is distinct from standard SOT packages due to its Chip Scale Package (CSP) form factor, offering reduced parasitic inductance and improved thermal performance relative to its physical size.

Replacement Considerations

Direct pin-compatible replacements within the same package family should be evaluated based on matching R_DS(ON), BV_DSS, and I_S ratings. Verify that any substitute component maintains the same X4-DSN2718-6 footprint and ESD protection characteristics to ensure board layout compatibility without redesign.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±8V under standard conditions. However, it can withstand ±10.5V for short durations defined as t=10μs with a duty cycle ≤ 1%.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises. Typical curves show positive temperature coefficients, meaning R_DS(ON) will be higher at 150°C compared to 25°C for the same gate drive voltage.

Is this component suitable for automotive applications?

For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/104/200, and PPAP capability, customers must contact Diodes Incorporated directly or their local representative, as standard production may not automatically include these qualifications.