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Product Detailed Parameters
- Description：MOSFET 2N-CH X3-DSN2718-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：35.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：2360pF @ 6V
- Power - Max：2.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X3-DSN2718-6
- Grade：-
- Qualification：-
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Overview
The DMN16M9UCA6-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes an X3-DSN2718-6 (Type B) CSP package with dimensions of 2.70mm × 1.81mm and a height of 0.21mm. The device features a source-source breakdown voltage (BV_DSS) of 12V. At V_GS = 4.5V, the maximum static on-resistance (R_DS(on)) is 6.5mΩ, supporting a continuous source current of 16.6A at +25°C. At V_GS = 2.5V, the maximum R_DS(on) is 11.4mΩ, supporting a continuous source current of 12.1A. Total gate charge (Q_g) is typically 35.2nC at V_SS = 6V and I_S = 18A. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a low-profile CSP package
- Integrated ESD protection for the gate terminal
- Totally lead-free and fully RoHS compliant construction
Applications
- Battery management systems
- Load switching circuits
- Battery protection modules
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS39737 Rev. 2-2. Confirm that the ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging format. Ensure the specific lot code matches the manufacturer's date code key requirements for production integration.
Selection Notes
Select this component when a compact footprint is required for high-current applications operating at low voltages. The 12V rating and sub-10mΩ resistance make it suitable for portable electronics. Verify that the PCB pad layout strictly follows the recommended X3-DSN2718-6 Type B specifications to achieve the rated thermal performance.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs designed for power management efficiency. It replaces older discrete solutions by integrating two channels into a single surface-mount package. The design prioritizes minimizing on-state resistance while maintaining superior switching characteristics for modern electronic devices.
Replacement Considerations
Direct substitutes must match the 12V BV_DSS, dual N-channel topology, and X3-DSN2718-6 package. Verify pinout compatibility between Source 1, Gate 1, Source 2, and Gate 2 terminals before implementation.
