DMN2002UFG-7

Single FETs, MOSFETs Overview

The DMN2002UFG-7 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes PowerDI3333-8 packaging and silicon technology. The device features a drain-source voltage (V_DSS) of 20 V and a gate-source voltage (V_GSS) rating of ±12 V. Continuous drain current (I_D) reaches 180 A at TC = +25°C, with a maximum static drain-source on-resistance (R_DS(ON)) of 1.4 mΩ at V_GS = 10 V. Total gate charge (Q_g) is 99 nC at V_GS = 10 V. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
• Small form factor package enables higher density end products and occupies significantly less board area compared to traditional SO-8 packages.
• Manufactured with lead-free finish and complies with RoHS directives; halogen and antimony free.
• Subjected to 100% unclamped inductive switching (UIS) testing in production to ensure robustness.

Single FETs, MOSFETs Applications

• Backlighting
• Power-management functions
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable regulatory standards required for your target market. Ensure proper handling procedures are followed during assembly due to the surface mount nature of the PowerDI3333-8 package.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and high current capability are critical within a compact footprint. Evaluate thermal resistance characteristics relative to the intended PCB layout and copper area. Consider gate threshold voltage requirements to ensure compatibility with the driving logic levels in the application circuit.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. These devices are engineered for general-purpose switching applications requiring efficient power handling. The PowerDI3333-8 package provides a thermally optimized solution for modern electronics demanding reduced physical size without compromising electrical performance.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers. Do not assume cross-compatibility based solely on similar package types or nominal voltage ratings without reviewing detailed electrical specifications.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is 180 A at a case temperature of +25°C.

Is the device suitable for automotive applications?

For automotive applications requiring specific change control or qualification to standards such as AEC-Q100/101/104/200, customers must contact Diodes Incorporated or their local representative directly.