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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.54A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：540mA
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 16V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN2004VK-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDSS) of 20 V and a continuous drain current (ID) of 540 mA at +25°C ambient temperature. The device exhibits low static drain-source on-resistance (RDS(ON)), with a maximum value of 0.55 Ω at VGS = 4.5V and ID = 540mA, or 0.9 Ω at VGS = 1.8V and ID = 350mA. Gate threshold voltage (VGS(TH)) ranges from 0.5 V to 1.0 V. Total power dissipation is rated at 250 mW, with a thermal resistance junction-to-ambient of 500 °C/W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in an ultra-small SOT563 surface-mount package
- Low gate threshold voltage for efficient drive capability
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Mobile phone applications
- LCD backlight control circuits
- Power management IC output switches
- Battery protection circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. The standard DMN2004VK-7 variant utilizes a 3000-unit tape and reel format. Confirm that the selected part number aligns with the required manufacturing process specifications and quality standards for the intended deployment environment.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Ensure the design accommodates the 500 °C/W thermal resistance by evaluating the PCB copper area and pad layout, as performance ratings depend on mounting on an FR-4 substrate with minimum recommended dimensions.
Part Context
This device belongs to the DMN2004 series of dual MOSFETs designed for space-constrained portable electronics. It serves as a replacement for discrete single-channel configurations where board real estate is limited. The SOT563 package provides a compact footprint suitable for high-density assembly processes common in modern consumer electronic devices.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in the SOT563 package with comparable VDSS and RDS(ON) specifications. Verify pinout compatibility and thermal characteristics before implementation.
