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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.54A SOT563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：540mA (Ta)
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 16V
- Power - Max：250mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The DMN2004VK-7B is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 540 mA at +25°C. The device exhibits low on-resistance, with R_DS(ON) values of 0.55 Ω at V_GS = 4.5V and 0.9 Ω at V_GS = 1.8V. Gate threshold voltage (V_GS(TH)) ranges from 0.5 V to 1.0 V. Total power dissipation is 250 mW, and the junction temperature range spans -55°C to +150°C. The component is housed in an SOT563 package.
Feature Summary
- Dual N-channel configuration within an ultra-small surface-mount package
- Low on-resistance and low gate threshold voltage for efficient switching
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Automotive applications requiring specific change control
- General purpose switching circuits
- Low voltage load switch applications
Procurement Notes
Verify the ordering suffix '-7B' corresponds to the 8000-unit tape and reel carrier quantity as specified in the manufacturer's documentation. Confirm that the packaging pitch has been adjusted to 2mm for this specific variant. Ensure compliance with RoHS 3 and REACH regulations during procurement. Validate the date code marking format against the latest manufacturing standards provided by Diodes Incorporated.
Selection Notes
Select the DMN2004VK-7B when a dual N-channel MOSFET solution is required in an SOT563 footprint. Consider the 20 V drain-source voltage rating and 540 mA continuous current capability for circuit design. Evaluate the thermal resistance of 500 °C/W for heat dissipation requirements. Verify that the 1.8 V gate drive compatibility meets the system logic levels.
Part Context
The DMN2004VK-7B belongs to the DMN2004VK series of dual N-channel enhancement mode MOSFETs produced by Diodes Incorporated. This series is designed for space-constrained applications requiring multiple switching elements. The '7B' suffix specifically denotes the 8000-unit tape and reel packaging option with a 2mm pitch, distinguishing it from other packaging variants like the 3000-unit or 10000-unit reels.
Replacement Considerations
Direct substitutes include the DMN2004VK-7 and DMN2004VK-13, which share identical electrical characteristics but differ in packaging quantities and reel pitch specifications.
