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DMN2005LP4K-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 200MA 3DFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2005LP4K-7
- Description：MOSFET N-CH 20V 200MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：900mV @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：41 pF @ 3 V
- FET Feature：-
- Power Dissipation (Max)：400mW (Ta)
- Operating Temperature：-65°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
Single FETs, MOSFETs datasheet and documents for DMN2005LP4K-7
Single FETs, MOSFETs Overview
The DMN2005LP4K-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20 V and a continuous drain current of 300 mA. The device offers low on-resistance, with a maximum value of 1.5 Ω at VGS = 4V and ID = 10mA. It operates within a temperature range of -65°C to +150°C and utilizes an X2-DFN1006-3 package.
Single FETs, MOSFETs Feature Summary
- Ultra-small surface-mount package design
- ESD protected gate structure
- Low input/output leakage characteristics
- Fast switching speed capability
Single FETs, MOSFETs Applications
- Battery protection circuits
- Power management systems
- Portable electronic devices
Single FETs, MOSFETs Procurement Notes
Verify the component against the official datasheet DS30799 Rev. 9-2 to confirm specifications. Ensure the ordering suffix matches the required reel size and packing quantity. Confirm compliance with RoHS and halogen-free requirements as specified in the manufacturer's documentation before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a compact footprint and low voltage handling. Consider the thermal resistance and power dissipation limits when designing heat management solutions. Verify that the gate threshold voltage aligns with the driving logic levels of the target circuit.
Single FETs, MOSFETs Part Context
This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for high reliability and meets JEDEC standards. The product line emphasizes low profile packaging and environmental compliance for modern electronics manufacturing.
Single FETs, MOSFETs Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade parts with Q-suffixes qualified to AEC-Q100/101/104/200 standards.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
