DMN2005UFGQ-13

$0.32

Description：MOSFET N-CH 20V 18A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e30158ae41eb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2005UFGQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 18A PWRDI3333. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2005UFGQ-13

Description：MOSFET N-CH 20V 18A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：18A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：6495 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.05W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for DMN2005UFGQ-13

DMN2005UFGQ-13

Single FETs, MOSFETs Overview

The DMN2005UFGQ-13 is a 20V N-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source voltage of 20V and a continuous drain current of 50A at TC=+25°C. The static drain-source on-resistance is 4.6mΩ max at VGS=4.5V and 8.7mΩ max at VGS=2.5V. Gate threshold voltage ranges from 0.4V to 1.2V. Total gate charge is 68.8nC at VGS=4.5V and 164nC at VGS=10V. Input capacitance is 6,495pF. Operating temperature range is -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low RDS(ON) ensures minimized on-state losses
Small-form factor thermally efficient package enables higher density end products
Occupies 33% of the board area occupied by SO-8 enabling smaller end product
100% unclamped inductive switching tested in production for reliability

Single FETs, MOSFETs Applications

Motor Control
Load Switch
DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches project requirements. The -13 suffix indicates a tape and reel quantity of 3000 units. Confirm AEC-Q101 qualification and PPAP capability if automotive compliance is required. Ensure the PowerDI3333-8 footprint aligns with the PCB layout design before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and high current handling in a compact form factor. The device supports both 4.5V and 2.5V gate drive levels, offering flexibility in driver selection. Consider the thermal resistance values when designing heat dissipation strategies for the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2005 series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a molded plastic case with matte tin annealed terminals over a copper leadframe. The component is designed to meet stringent automotive application requirements.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts with matching 20V BVDSS, similar RDS(ON), and compatible PowerDI3333-8 packaging. Verify pinout compatibility and thermal characteristics before substitution.