DMN2005UPS-13

$0.71

Description：MOSFET N-CH 20V 20A POWERDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:84a49a35908c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2005UPS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 20A POWERDI5060. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2005UPS-13

Description：MOSFET N-CH 20V 20A POWERDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：4.6mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：142 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：5337 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for DMN2005UPS-13

DMN2005UPS-13

Single FETs, MOSFETs Overview

The DMN2005UPS-13 is a 20V N-Channel Enhancement Mode MOSFET in a PowerDI5060-8 package. It features a maximum drain-source on-resistance of 4.6mΩ at VGS=4.5V and 8.7mΩ at VGS=2.5V, with continuous drain currents of 100A at TC=+25°C and 80A at VGS=2.5V. The device has a gate threshold voltage range of 0.4V to 1.2V, total gate charge of 60nC at VGS=4.5V, and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Thermally efficient PowerDI5060-8 package for cooler running applications
Low RDS(ON) minimizes on-state losses
Low input capacitance enables fast switching speed
Package profile under 1.1mm ideal for thin applications

Single FETs, MOSFETs Applications

Motor Control
DC-DC Converters
Power Management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and is halogen and antimony free as defined by the manufacturer's green product standards. Ensure the application environment remains within the specified operating and storage temperature limits.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and high current handling are required in a compact form factor. The device supports both 4.5V and 2.5V gate drive conditions. Consider the thermal resistance characteristics and package dimensions for integration into space-constrained designs requiring efficient power management.

Single FETs, MOSFETs Part Context

This part belongs to the DMN2005 series of N-Channel Enhancement Mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in the PowerDI5060-8 surface mount case. The device is designed to minimize on-resistance while maintaining superior switching performance for modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

For automotive applications requiring specific change control or AEC-Q qualification, refer to the related automotive grade parts with the Q-suffix. Verify pinout compatibility and electrical parameters before substituting with other MOSFETs in the same voltage class.