DMN2009UFDF-13

Single FETs, MOSFETs Overview

The DMN2009UFDF-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 12.8A at +25°C. The device offers a low on-resistance (RDS(ON)) of 9mΩ max at VGS = 4.5V and 13mΩ max at VGS = 2.5V. Packaged in a U-DFN2020-6 (Type F) surface-mount footprint, it supports an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for high-efficiency power management applications with minimized on-state resistance and superior switching performance.
• Features a 0.6mm profile and a compact PCB footprint of 4mm², making it suitable for low-profile designs.
• Constructed as a totally lead-free and fully RoHS compliant device that is halogen and antimony free.

Single FETs, MOSFETs Applications

• General purpose interfacing switches
• Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS 3 and halogen-free status against project specifications. Ensure the U-DFN2020-6 package dimensions align with the target PCB layout constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 20V rating and high continuous current capability are required in a minimal footprint. Evaluate thermal dissipation needs based on the specified RθJA values for both minimum pad and thermal bias configurations. Consider the low gate threshold voltage for compatibility with various logic-level drive signals.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in the U-DFN2020-6 package type. The product line focuses on providing low on-resistance characteristics within a small physical form factor for modern electronic designs.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before considering any alternative components.

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current for the DMN2009UFDF?

The maximum pulsed drain current (IDM) is 85A, defined by a 380µs pulse duration with a 1% duty cycle.

Is the DMN2009UFDF qualified for automotive applications?

For automotive applications requiring specific change control or qualification to standards like AEC-Q100/101/104/200, customers must contact Diodes Incorporated directly.