DMN2009USS-13

$0.51

Description：MOSFET N-CH 20V 8SOIC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3bd29e32c04d Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2009USS-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 8SOIC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2009USS-13

Description：MOSFET N-CH 20V 8SOIC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：12.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1706 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for DMN2009USS-13

DMN2009USS-13

Single FETs, MOSFETs Overview

The DMN2009USS-13 is a 20V N-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SO-8 package. It features low on-resistance (RDS(ON)) of 8mΩ at VGS=10V and 12mΩ at VGS=2.5V, supporting continuous drain currents up to 12.8A at +25°C. The device offers fast switching speeds with low input capacitance and gate charge, ensuring high efficiency in power management applications.

Single FETs, MOSFETs Feature Summary

Low on-state resistance for minimized conduction losses
Fast switching speed with low input capacitance
Low gate threshold voltage for efficient drive requirements
Totally lead-free and fully RoHS compliant

Single FETs, MOSFETs Applications

Backlighting circuits
Power management functions
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact part number DMN2009USS-13 and confirms compliance with RoHS directives. Ensure the SO-8 package type aligns with your PCB layout requirements. Check datasheet thermal characteristics against your specific operating temperature conditions.

Single FETs, MOSFETs Selection Notes

Select this MOSFET for applications requiring low RDS(ON) and fast switching within a 20V system. Consider the SO-8 package size and thermal resistance values when designing heat dissipation strategies. Verify that the gate drive voltage meets the specified thresholds for optimal performance.

Single FETs, MOSFETs Part Context

This component belongs to Diodes Incorporated's N-channel enhancement mode MOSFET portfolio. It is designed to provide high efficiency in power management systems by minimizing on-state resistance while maintaining superior switching performance characteristics.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility without verifying electrical parameters and package dimensions.