ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 22V 9A X4-DSN1818-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：22V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Rds On (Max) @ Id, Vgs：6.5mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1580pF @ 12V
- Power - Max：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：X4-DSN1818-6
- Grade：-
- Qualification：-
Download product information
Overview
The DMN2011UCA6-7 is a dual N-channel MOSFET array manufactured by Diodes Incorporated using silicon technology. It features a breakdown voltage (BVDSS) range of 8V to 24V and supports a continuous drain current of 9A. The device is housed in an X4-DSN1818-6 surface-mount package, designed for compact PCB layouts. Thermal performance includes a power dissipation rating of 800mW. This component is supplied in tape and reel formats with standard factory packaging quantities.
Feature Summary
- Dual N-channel configuration within a single compact package
- Silicon-based metal oxide semiconductor field-effect transistor technology
- Surface mount design optimized for automated assembly processes
Applications
- Portable consumer electronics power management
- Industrial control circuit switching
- Automotive low-voltage signal routing
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct pinout and electrical characteristics. Confirm that the requested quantity aligns with the standard tape and reel packaging specifications provided by Diodes Incorporated. Cross-reference the RoHS compliance status with current environmental regulations applicable to your region before finalizing procurement orders.
Selection Notes
Select this component when space-constrained designs require dual N-channel switching capabilities. The X4-DSN1818-6 package offers a small footprint suitable for high-density boards. Ensure the application voltage remains within the 8V to 24V breakdown range and that thermal constraints allow for the specified 800mW dissipation without excessive heatsinking requirements.
Part Context
This part belongs to Diodes Incorporated's discrete MOSFET portfolio, targeting applications requiring efficient power switching in minimal space. The dual configuration reduces component count compared to using separate single FETs. It complements other low-voltage logic-level transistors in the manufacturer's lineup for integrated power solutions.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the X4-DSN1818-6 package dimensions and maintains equivalent N-channel dual functionality. Verify that alternative parts meet the same voltage and current ratings to prevent circuit failure.
