DMN2011UFDF-13

$0.63

Description：MOSFET N-CH 20V 14.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c1ae6c9d5022 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2011UFDF-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 14.2A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2011UFDF-13

Description：MOSFET N-CH 20V 14.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：14.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：56 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：2248 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN2011UFDF-13

DMN2011UFDF-13

Single FETs, MOSFETs Overview

The DMN2011UFDF-13 is a 20V N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². The device provides a maximum drain-source on-resistance (RDS(ON)) of 9.5mΩ at VGS = 4.5V and 11mΩ at VGS = 2.5V, supporting continuous drain currents up to 11.7A at +25°C. Key electrical parameters include a gate threshold voltage range of 0.4V to 1.0V, total gate charge of 24nC at VGS = 4.5V, and an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features a low-profile 0.6mm case height and a compact 4mm² PCB footprint, making it ideal for space-constrained designs.
Includes ESD protected gate structure and utilizes totally lead-free, RoHS compliant, halogen and antimony free materials.

Single FETs, MOSFETs Applications

General purpose interfacing switch
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The DMN2011UFDF-13 designation corresponds to a reel size of 13 inches containing 10,000 units per reel. Confirm that the required quantity aligns with standard manufacturing reel sizes or cut tape availability if partial quantities are needed. Ensure compliance with environmental directives such as RoHS 3 and material definitions regarding halogen and antimony content.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile surface-mount solution is required for 20V switching applications. The device offers optimized RDS(ON) characteristics at both 4.5V and 2.5V gate drive voltages, suitable for various logic levels. Consider the thermal resistance values and power dissipation limits relative to the intended PCB copper area and ambient operating conditions to ensure reliable operation within the specified temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in the U-DFN2020-6 (Type F) plastic molded case. The product line emphasizes green manufacturing standards, being free from intentionally added lead, halogens, and antimony, while meeting UL flammability classification rating 94V-0.

Single FETs, MOSFETs Replacement Considerations

For automotive applications requiring specific change control, AEC-Q100/101/200 qualified parts, PPAP capability, and IATF 16949 certified manufacturing, contact Diodes Incorporated directly or consult local representatives for appropriate alternatives.