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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 12.2A 4VDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：12.2A (Ta)
- Rds On (Max) @ Id, Vgs：9.5mOhm @ 10A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2248pF @ 10V
- Power - Max：2.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-VFDFN Exposed Pad
- Supplier Device Package：V-DFN2050-4
- Grade：-
- Qualification：-
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Overview
The DMN2011UFX-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a V-DFN2050-4 package. It features a drain-source voltage (V(BR)DSS) of 20V and a maximum continuous drain current (ID) of 12.2A at +25°C with VGS=4.5V. The static drain-source on-resistance (RDS(ON)) is 9.5mΩ at VGS=4.5V and 13mΩ at VGS=2.5V. Key dynamic characteristics include a total gate charge (Qg) of 24nC at VGS=4.5V and an input capacitance (Ciss) of 2,248pF. The device operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Dual N-channel configuration with integrated gate protection diodes for each channel.
- Optimized for low on-state resistance and superior switching performance.
- Qualified to AEC-Q101 standards for high reliability applications.
- Totally lead-free, fully RoHS compliant, and halogen/antimony free.
Applications
- General purpose interfacing switches
- High-efficiency power management functions
- Portable applications requiring compact dual-channel solutions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the V-DFN2050-4 case dimensions match your PCB footprint requirements. Ensure compliance with J-STD-020 moisture sensitivity level 1 handling procedures during assembly.
Selection Notes
Select this component when a dual N-channel topology is required within a minimal surface area footprint. The 20V rating suits low-voltage DC-DC converters and load switch applications. Evaluate thermal resistance parameters against your system's heat dissipation capabilities to ensure operation remains within the specified junction temperature limits.
Part Context
This part belongs to the DMN series of advanced MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is manufactured in a molded plastic case with nickel-palladium-gold terminated copper leadframe. The product is intended for general-purpose electronic markets including consumer electronics and industrial equipment.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps before considering alternative manufacturers or different package types.
