DMN2013UFX-7

Overview

The DMN2013UFX-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a W-DFN5020-6 surface-mount package and operates with a drain-source voltage of 20V. The device provides a maximum on-resistance of 11.5mΩ at VGS=4.5V and 14mΩ at VGS=2.5V, supporting continuous drain currents of 10A at 25°C and 8A at 70°C. Key electrical parameters include a gate threshold voltage of 0.5V to 1.1V, total gate charge of 32.4nC at VGS=4.5V, and input capacitance of 2607pF. Thermal characteristics specify a junction-to-ambient resistance of 163°C/W on FR-4 PCBs, with an operating temperature range from -55°C to +150°C.

Feature Summary

• Dual N-channel configuration designed for high efficiency power management applications
• Minimized on-state resistance while maintaining superior switching performance
• Qualified to AEC-Q101 standards for automotive-grade high reliability
• Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

• General purpose interfacing switch
• Power management functions in portable electronics
• High efficiency load switching circuits

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard 3000-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm that the component meets the required environmental compliance standards, specifically RoHS 2 and the halogen-free criteria, prior to final procurement authorization.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Ensure the design accommodates the 20V drain-source voltage limit and verify that the thermal management strategy addresses the 163°C/W junction-to-ambient resistance for single-sided FR-4 PCB layouts under expected load conditions.

Part Context

This part belongs to the DMN series of dual MOSFETs from Diodes Incorporated, utilizing the W-DFN5020-6 case style. It serves as a specialized discrete semiconductor component intended for integration into printed circuit boards where space constraints and dual-channel functionality are critical design factors.

Replacement Considerations

Consult official substitution guides for verified equivalents within the same product family or alternative manufacturers offering identical pinouts and electrical ratings. Do not assume functional interchangeability without validating all absolute maximum ratings and thermal characteristics against the original datasheet specifications.

FAQ

What is the maximum continuous drain current for the DMN2013UFX?

The maximum continuous drain current is 10A at an ambient temperature of +25°C and decreases to 8A at +70°C.

Does the DMN2013UFX support automotive applications?

Yes, the device is qualified to AEC-Q101 standards, indicating suitability for high-reliability automotive environments.

What is the typical turn-on delay time for this MOSFET?

The typical turn-on delay time (tD(on)) is 8.6 nanoseconds under test conditions of VDS=10V, ID=8.5A, and RG=1.8Ω.