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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 9A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：9A
- Rds On (Max) @ Id, Vgs：13mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1550pF @ 10V
- Power - Max：800mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：U-DFN2030-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN2014LHAB-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2030-6 (Type B) surface-mount package. It features a drain-source voltage of 20V and a maximum continuous drain current of 9.0A at +25°C. The device exhibits low on-state resistance, with RDS(ON) values ranging from 10mΩ to 28mΩ depending on the gate-source voltage. Key electrical parameters include a total gate charge of 8.4nC at VGS=2.5V and 16nC at VGS=4.5V. Thermal characteristics specify a junction-to-ambient thermal resistance of 73.7°C/W under standard mounting conditions.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Low on-state resistance for high efficiency power management
- Fast switching speed supported by low input capacitance
- ESD protected gates rated up to 2kV
Applications
- Power Management Functions
- Battery Pack Protection
- Load Switches
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The '-7' suffix indicates a tape and reel packaging format containing 3,000 units per reel. Confirm that the required component marking codes and date code formats align with project specifications. Ensure compliance with RoHS and AEC-Q101 standards if applicable to the target application environment.
Selection Notes
Select this component when a dual N-channel topology is required within a minimal footprint. The U-DFN2030-6 package provides efficient thermal dissipation suitable for portable applications. Evaluate the gate threshold voltage requirements against the available drive voltages to ensure optimal conduction performance. Consider the 20V breakdown rating relative to the system's maximum operating voltage.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs designed by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The DMN2014LHAB variant specifically targets high-efficiency power management applications requiring compact solutions.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-referencing requires matching channel configuration, voltage ratings, and package dimensions.
