ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 5.2A 8DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.2A
- Rds On (Max) @ Id, Vgs：18mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：1472pF @ 10V
- Power - Max：770mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerUDFN
- Supplier Device Package：U-DFN3030-8
- Grade：-
- Qualification：-
Download product information
Overview
The DMN2016LFG-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN3030-8 surface-mount package with an 8-pin configuration. The device supports a drain-source voltage (V(BR)DSS) of 20 V and a gate-source voltage (VGSS) of ±8 V. Continuous drain current (ID) reaches 5.2 A at 25°C, while pulsed drain current (IDM) is rated at 30 A. Static drain-source on-resistance (RDS(on)) is specified as 18 mΩ max at VGS = 4.5 V and 30 mΩ max at VGS = 1.8 V. Total gate charge (Qg) is 16.0 nC, and input capacitance (Ciss) is 1472 pF. Power dissipation (PD) is 0.77 W, with a junction temperature range of -55 to +150 °C.
Feature Summary
- Dual N-channel architecture designed for high-efficiency power management applications
- Low on-state resistance combined with fast switching speed capabilities
- ESD protected gate structure rated up to 2 kV
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- Power management functions
- Battery pack protection circuits
- Load switch implementations
Procurement Notes
Verify the component against the official datasheet DS32053 Rev. 3 to confirm electrical parameters and package dimensions. Ensure the ordering suffix matches the required tape and reel quantity of 3000 units per reel. Check for RoHS compliance and lead-free status requirements specific to your manufacturing process. Confirm that the U-DFN3030-8 footprint aligns with your PCB design guidelines.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. The 20 V rating suits systems operating below this threshold. Consider the 18 mΩ on-resistance for efficiency needs at higher gate voltages. Verify thermal constraints given the 0.77 W power dissipation limit in the small form factor package.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes the U-DFN3030-8 case style, which provides a compact surface-mount option. The device is designed to minimize on-state resistance while maintaining superior switching performance. It is intended for use in portable electronics and battery-powered devices requiring efficient power control.
Replacement Considerations
Check for direct replacements within the DMN series offering similar voltage and current ratings. Verify pin compatibility and package dimensions before substitution. Ensure equivalent RDS(on) and Qg values are met for circuit performance parity.
