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Product Detailed Parameters
- Description：MOSFET 2N-CH 24V 9.9A 4VDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：24V
- Current - Continuous Drain (Id) @ 25°C：9.9A (Ta)
- Rds On (Max) @ Id, Vgs：15mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：950pF @ 10V
- Power - Max：1.07W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：4-VFDFN Exposed Pad
- Supplier Device Package：V-DFN2050-4
- Grade：-
- Qualification：-
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Overview
The DMN2016UFX is a dual N-channel enhancement mode MOSFET in a V-DFN2050-4 package. It features a drain-source voltage (BVDSS) of 24V and low on-resistance, specified as 15mΩ max at VGS=4.5V and 20mΩ max at VGS=2.5V. Continuous drain current reaches 9.9A at VGS=4.5V and 8.6A at VGS=2.5V. Key electrical parameters include an input capacitance of 950pF, total gate charge of 14nC, and turn-on delay time of 3.8ns. The device supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration for general purpose interfacing and power management
- Optimized for low on-state resistance and superior switching performance
- ESD protected with fully lead-free and RoHS compliant construction
Applications
- General Purpose Interfacing Switch
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging format containing 3,000 units per reel. Confirm that the component meets the required environmental standards, specifically the Halogen and Antimony-free 'Green' device definition provided by the manufacturer. Ensure the V-DFN2050-4 package dimensions align with the target PCB footprint layout.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications up to 24V. The V-DFN2050-4 package offers a balance between thermal dissipation and board space efficiency. Consider the 15mΩ on-resistance specification for high-efficiency designs where conduction loss minimization is critical under standard drive conditions.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the V-DFN2050-4 surface-mount case style, designed for automated assembly. The device integrates two independent N-channel enhancement mode transistors into a single molded plastic package with nickel-palladium-gold terminated leads.
Replacement Considerations
Direct substitutes must match the 24V BVDSS rating, dual N-channel topology, and V-DFN2050-4 package outline. Verify that alternative components maintain comparable RDS(ON) values at similar gate drive voltages to ensure equivalent thermal and switching performance in the existing circuit design.
