DMN2016UTS-13

$0.71

Description：MOSFET 2N-CH 20V 8.58A 8TSSOP
Series：-

SKU:83b095d49171 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 8.58A 8TSSOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：8.58A
Rds On (Max) @ Id, Vgs：14.5mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1495pF @ 10V
Power - Max：880mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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DMN2016UTS-13

Overview

The DMN2016UTS-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSSOP-8L package with a drain-source voltage (VDSS) of 20 V and a continuous drain current (ID) of 8.58 A at 25°C. The device exhibits a low static drain-source on-resistance (RDS(on)) of 11 mΩ at VGS = 4.5V and ID = 9.4A, or 16.5 mΩ at VGS = 2.5V and ID = 8.3A. Key electrical parameters include a gate threshold voltage (VGS(th)) ranging from 0.4 V to 1.0 V, total gate charge (Qg) of 16.5 nC, input capacitance (Ciss) of 1495 pF, and power dissipation (PD) of 0.88 W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a compact TSSOP-8L surface-mount package
Low on-resistance for efficient power handling
Fast switching speed with low input capacitance
ESD protection rated up to 2kV

Applications

Power management circuits
Load switches
DC-DC converter output stages
Motor control applications

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS31995 Rev. 1-2. Confirm the part number suffix matches the specified tape and reel packaging quantity of 2500 units. Ensure compliance with RoHS standards and AEC-Q101 reliability qualifications before integration into designs.

Selection Notes

Select this component for applications requiring a 20V rating and high current capability in a small footprint. Evaluate thermal resistance and power dissipation limits under actual operating conditions. Consider the gate threshold voltage range when designing drive circuits to ensure reliable turn-on across varying temperatures.

Part Context

This component belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It shares the TSSOP-8L form factor with other devices in the family but offers specific electrical characteristics tailored for low-voltage, high-current switching applications.

Replacement Considerations

Check pinout compatibility and electrical specifications against alternatives. Verify that substitute parts meet the same VDSS, ID, and RDS(on) requirements within the TSSOP-8L package.