DMN2019UTS-13

$0.54

Description：MOSFET 2N-CH 20V 5.4A 8TSSOP
Series：-

SKU:9a750dc41255 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 5.4A 8TSSOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：5.4A
Rds On (Max) @ Id, Vgs：18.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：143pF @ 10V
Power - Max：780mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package：8-TSSOP
Grade：-
Qualification：-

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DMN2019UTS-13

Overview

The DMN2019UTS-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSSOP-8 surface-mount package and operates within an ambient temperature range of -55°C to +150°C. The device provides a drain-source breakdown voltage (BVDSS) of 20V and a gate-source voltage rating (VGSS) of ±12V. At VGS = 10V, the maximum on-resistance (RDS(on)) is 18.5mΩ with a continuous drain current (ID) of 5.4A. Total power dissipation is rated at 0.78W, supported by a thermal resistance junction-to-ambient of 161°C/W.

Feature Summary

Dual N-channel configuration for compact power management integration
Low input capacitance and fast switching speed for high efficiency
ESD protection up to 2kV for enhanced circuit robustness
Qualified to AEC-Q101 standards for automotive reliability

Applications

Power management functions
Load switch applications

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS35556 Rev. 2-2 to confirm authenticity. Ensure the ordering suffix matches the specified tape and reel packaging format. Check for compliance with RoHS 2 directives and verify that the device meets the required AEC-Q101 qualification standards before finalizing procurement.

Selection Notes

Select this component when a low-profile dual N-channel solution is required for 20V logic-level control. Evaluate the RDS(on) performance across various gate voltages to ensure compatibility with the specific driver output levels. Consider the total gate charge and input capacitance values to determine suitability for the intended switching frequency and drive requirements.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a TSSOP-8 case constructed from molded plastic with a UL 94V-0 flammability rating. The device is designed to minimize on-state resistance while maintaining superior switching performance characteristics.