DMN2022UFDF-7

$0.45

Description：MOSFET N-CH 20V 7.9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bda13ab4d635 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2022UFDF-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 7.9A 6UDFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2022UFDF-7

Description：MOSFET N-CH 20V 7.9A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：907 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：660mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for DMN2022UFDF-7

DMN2022UFDF-7

Single FETs, MOSFETs Overview

The DMN2022UFDF-7 is a surface-mount N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) package. It features a drain-source voltage of 20V and a maximum continuous drain current of 9.4A under pulsed conditions at +25°C. The device offers low on-state resistance, specified as 22mΩ max at VGS=4.5V and 26mΩ max at VGS=2.5V. Total gate charge is 18nC max at VGS=8V. Thermal performance includes a junction-to-ambient thermal resistance of 60°C/W steady state with an exposed pad. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Low profile design with a 0.6mm case height suitable for space-constrained applications.
Integrated ESD protection diode on the gate terminal.
Optimized for high efficiency power management through minimized on-state resistance.
Compliant with RoHS directives and free of halogen and antimony.

Single FETs, MOSFETs Applications

Battery Management Systems
DC-DC Converters
General Power Management Functions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm reel size and quantity per reel. Confirm that the component meets all applicable automotive or industrial qualification standards required for your specific deployment environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a compact N-channel MOSFET with a 20V rating and low RDS(ON) is required. Ensure the driving circuit can provide sufficient gate voltage to achieve the desired current handling capabilities. Verify PCB layout supports the exposed pad for optimal thermal dissipation.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for general-purpose switching applications. The U-DFN2020-6 package provides a small footprint while maintaining adequate thermal performance for low-power density designs.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Do not assume pin compatibility or electrical equivalence with other 20V N-channel MOSFETs without reviewing their respective datasheets.