DMN2022UNS-7

Overview

The DMN2022UNS-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a POWERDI®3333-8 package. It features a drain-source voltage (V(BR)DSS) of 20V and a maximum continuous drain current (ID) of 10.7A at +25°C. The device offers low on-state resistance (RDS(ON)), with a maximum value of 10.8mΩ at VGS = 4.5V and 14.5mΩ at VGS = 2.5V. Key electrical parameters include a total gate charge (Qg) of 20.3nC, input capacitance (Ciss) of 1870pF, and a junction-to-ambient thermal resistance (RθJA) of 107°C/W under steady-state conditions.

Feature Summary

• Dual N-channel configuration providing complementary pair functionality within a single compact surface-mount package.
• Optimized for high efficiency power management through minimized on-state resistance while maintaining superior switching performance.
• Integrated ESD protection rated up to 2kV and internal gate protection diodes for enhanced reliability.

Applications

• Power Management Functions
• Load Switch

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity. The -7 suffix indicates a 2000-unit tape and reel, while -13 denotes a 3000-unit reel. Confirm that the component meets RoHS compliance and halogen-free requirements as specified by the manufacturer's definitions for green devices before finalizing procurement specifications.

Selection Notes

Select this component for applications requiring a 20V dual N-channel MOSFET with low RDS(ON). Ensure the operating junction temperature remains within the -55°C to +150°C range. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction characteristics. Consider the thermal resistance values when designing heat dissipation strategies for the POWERDI®3333-8 package.

Part Context

This part belongs to the DMN series of dual N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the POWERDI®3333-8 case style, which is designed for efficient thermal performance and space-saving surface mount assembly. The series is characterized by silicon technology and is intended for general-purpose power management solutions.

Replacement Considerations

Consult official datasheets for alternative dual N-channel MOSFETs with compatible 20V ratings and similar current capabilities. Verify pinout compatibility and thermal resistance specifications before substituting. No direct public substitute part numbers are confirmed in the provided source material.

FAQ

What is the maximum continuous drain current for the DMN2022UNS-7?

The maximum continuous drain current is 10.7A at an ambient temperature of +25°C and 8.6A at +70°C, based on steady-state conditions on an FR-4 substrate.

Does the DMN2022UNS-7 include internal protection features?

Yes, the device includes ESD protection rated up to 2kV and internal gate protection diodes for each channel.

What is the typical reverse recovery charge (QRR) for the body diode?

The typical reverse recovery charge is 135nC, measured at a forward current of 4A and a di/dt of 100A/μs.