DMN2023UCB4-7

Overview

The DMN2023UCB4-7 is a dual N-channel enhancement mode field MOSFET manufactured by Diodes Incorporated. It features a source-to-source configuration within an X1-WLB1818-4 package. Key electrical parameters include a maximum source-to-source voltage of 24V and a continuous source current of 6.0A at +25°C. The static source-to-source on-resistance (RSS(ON)) is typically 26mΩ at VGS = 4.5V and IS = 3.0A, with a maximum of 29mΩ at VGS = 3.7V. Gate threshold voltage ranges from 0.5V to 1.3V. Total gate charge is typically 29nC at VGS = 4.5V and VSS = 10V. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Dual N-channel MOSFETs integrated into a single ultra-thin WLCSP package for high-density board space efficiency.
• Built-in gate-source protection diode providing electrostatic discharge robustness up to 2kV Human Body Model rating.
• Qualified to AEC-Q101 standards to ensure high reliability in automotive and demanding environments.
• Designed to minimize on-state resistance while maintaining superior switching performance for efficient power management.

Applications

• Battery Management Systems
• Load Switching circuits
• Battery Protection modules

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the component meets RoHS compliance and is halogen-free if required by the manufacturing process. Ensure the design accommodates the X1-WLB1818-4 package dimensions and moisture sensitivity level 1 requirements during storage and assembly.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage applications. The 24V rating and 6A continuous current capability suit portable electronics. Evaluate the thermal resistance of 88.21°C/W against the expected power dissipation of 1.45W at +25°C. Consider the low gate charge for high-frequency switching needs.

Part Context

This part belongs to Diodes Incorporated's generation of thin WLCSP MOSFETs designed for high-efficiency power management. It utilizes a specialized packaging process to reduce on-resistance while maintaining small footprint. The dual configuration allows for independent control or parallel operation within a minimal area, targeting space-constrained consumer devices.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter margins before considering alternative manufacturers or different package types.

FAQ

What is the maximum source-to-source breakdown voltage?

The maximum source-to-source breakdown voltage (V(BR)SSS) is 24V.

How is the gate protected against electrostatic discharge?

The device includes a built-in G-S protection diode that provides ESD protection rated at 2kV under the Human Body Model (HBM) standard.

What is the typical total gate charge?

The typical total gate charge (Qg) is 29nC, measured at VGS = 4.5V and VSS = 10V with IS = 6A.