Single FETs, MOSFETs DMN2024U-13 product image

DMN2024U-13

$0.42
  • Description:MOSFET N-CH 20V 6.8A SOT23 T&R 1
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d5bddb38e598 Category: Brand:

  
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DMN2024U-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 6.8A SOT23 T&R 1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2024U-13

  • Description:MOSFET N-CH 20V 6.8A SOT23 T&R 1
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:6.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:25mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id:900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.1 nC @ 4.5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:647 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):800mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2024U-13

DMN2024U-13

Single FETs, MOSFETs Overview

The DMN2024U-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a SOT-23 surface-mount package. It features a drain-source breakdown voltage of 20V and a maximum continuous drain current of 6.8A at 25°C. The device exhibits a low on-state resistance of 25mΩ at VGS=4.5V and 29mΩ at VGS=2.5V. Key electrical parameters include a gate threshold voltage ranging from 0.5V to 0.9V, total gate charge of 7.1nC, and input capacitance of 647pF. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management.
  • Features an ESD-protected gate structure with integrated protection diode.
  • Totally lead-free and fully RoHS compliant, containing no intentionally added lead.
  • Halogen and antimony free, classified as a "Green" device.

Single FETs, MOSFETs Applications

  • Backlighting circuits
  • Power-management functions
  • DC-DC converters
  • Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental directives relevant to your region. Ensure compatibility with standard SMD/SMT assembly processes. Review the datasheet for thermal dissipation requirements under actual operating conditions. Validate that the selected part number aligns with the intended PCB footprint and pad layout specifications.

Single FETs, MOSFETs Selection Notes

Select this component when low conduction losses are critical alongside fast switching speeds. The 20V rating suits low-voltage applications requiring moderate current handling. Consider the SOT-23 package constraints for thermal management in dense layouts. Evaluate the gate threshold voltage against available drive signals. Assess the total gate charge for driver capability requirements in high-frequency switching scenarios.

Single FETs, MOSFETs Part Context

This component belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on optimizing the balance between on-resistance and switching speed. These devices are engineered for compact surface-mount implementations. The DMN2024U specifically targets efficiency improvements in portable and battery-powered electronics.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Diodes Incorporated parts in the DMN series sharing identical pinouts and voltage ratings. Verify that substitute components meet or exceed the 20V breakdown and 25mΩ on-resistance specifications. Ensure the replacement maintains the same SOT-23 package dimensions for mechanical compatibility.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current?

The maximum continuous drain current is 6.8A at an ambient temperature of +25°C.

Is the gate protected against electrostatic discharge?

Yes, the device features an ESD-protected gate structure.

What is the typical gate threshold voltage?

The gate threshold voltage typically ranges from 0.5V to 0.9V at VDS = VGS and ID = 250µA.

DMN2024U-13DMN2024U-13
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