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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 5.2A 8DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.2A (Ta)
- Rds On (Max) @ Id, Vgs：23mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：647pF @ 10V
- Power - Max：950mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerUDFN
- Supplier Device Package：U-DFN3030-8
- Grade：-
- Qualification：-
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Overview
The DMN2024UDH-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN3030-8 surface-mount package with a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 5.2A at +25°C. The device exhibits low on-state resistance, specified as 23mΩ max at VGS = 4.5V and 27mΩ max at VGS = 2.5V. Total gate charge (Qg) is typically 6.5nC. Thermal characteristics include a junction-to-ambient thermal resistance (RθJA) of 132°C/W on a standard FR-4 PCB and 71°C/W with an optimized copper heat sink. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration designed for high-efficiency power management applications
- Low input capacitance and fast switching speed capabilities
- ESD protected gate structure with low input/output leakage currents
- Totally lead-free and fully RoHS compliant construction
Applications
- High-efficiency power management circuits
- DC/DC converter modules
- Power distribution networks in portable devices
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging format. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards. Ensure procurement channels are authorized to guarantee product authenticity and traceability.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage applications. Evaluate the 20V breakdown voltage against system requirements. Consider the U-DFN3030-8 footprint constraints during PCB layout design. Verify thermal performance requirements against the specified RθJA values under actual operating conditions.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It utilizes the U-DFN3030-8 case outline, which provides a small surface-mount profile. The device integrates two independent N-channel enhancement mode field-effect transistors within a single molded plastic package.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Do not assume functional equivalence based solely on pinout or generic specifications without verifying electrical parameters and package dimensions.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 5.2A at an ambient temperature of +25°C.
What is the package type for this component?
The component is housed in a U-DFN3030-8 surface-mount package.
Is the device suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and PPAP capability, contact the manufacturer directly.
