DMN2024UFU-7

$0.15

Description：MOSFET 2N-CH 20V 7.5A 6UDFN
Series：-

SKU:1e2019c92a64 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 7.5A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Common Drain
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs：20.2mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id：950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：647pF @ 10V
Power - Max：810mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UFDFN Exposed Pad
Supplier Device Package：U-DFN2030-6 (Type B)
Grade：-
Qualification：-

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DMN2024UFU-7

Overview

The DMN2024UFU-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2030-6 (Type B) surface-mount package with a drain-source voltage rating of 20V. The device provides a maximum continuous drain current of 21A at TC = +25°C and 17A at TC = +70°C. Static drain-source on-resistance is specified as 20.2mΩ max at VGS = 4.5V and 23.5mΩ max at VGS = 2.5V. Gate-source voltage is rated at ±10V, with a gate threshold voltage range of 0.35V to 0.95V. Total power dissipation reaches 1.71W at TA = +25°C when mounted on an FR-4 substrate with a 1-inch square copper plate.

Feature Summary

Dual N-channel configuration designed for high-efficiency power management applications
Low on-state resistance combined with superior switching performance
ESD protected gate structure
Totally lead-free and fully RoHS compliant construction

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The -7 suffix indicates a 3000-unit tape and reel packaging format, while the -13 suffix denotes a 10000-unit tape and reel. Confirm that the required quantity aligns with these standard factory packaging configurations to ensure proper handling and availability.

Selection Notes

Select this component for circuits requiring a compact dual N-channel solution within a 20V voltage limit. Ensure the thermal design accommodates the junction-to-ambient thermal resistance of 155 °C/W on standard FR-4 substrates without copper plating, or utilize the recommended pad layout to achieve the lower 73 °C/W rating. Verify that the gate drive voltage meets the minimum requirements for the desired on-resistance level.

Part Context

This part belongs to the DMN2024UFU series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2030-6 (Type B) case style, which measures approximately 2.0mm by 3.0mm. The device is constructed using molded plastic green molding compound with NiPdAu terminal connections over a copper leadframe, ensuring compliance with moisture sensitivity level 1 standards per J-STD-020.