DMN2024UFX-7

DMN2024UFX-7

$0.17
  • Description:MOSFET 2N-CH 20V 8A 4VDFN
  • Series:-

SKU:2e22d419bbee Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 8A 4VDFN
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:8A (Tc)
  • Rds On (Max) @ Id, Vgs:22mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:14.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:647pF @ 10V
  • Power - Max:920mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-VFDFN Exposed Pad
  • Supplier Device Package:V-DFN2050-4
  • Grade:-
  • Qualification:-

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DMN2024UFX-7

Overview

The DMN2024UFX-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN2050-4 case with a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±10V. The device provides a continuous drain current (ID) of 8A at TC = +25°C, reducing to 6A at TC = +70°C. Maximum static drain-source on-resistance (RDS(ON)) is specified at 22mΩ when VGS = 4.5V and ID = 4A, or 26mΩ when VGS = 2.5V and ID = 4A. Total power dissipation reaches 0.92W on FR-4 substrate with minimum pad layout, and 2.1W with a 1-inch square copper plate. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Dual N-channel configuration designed for high-efficiency power management applications
  • Low on-state resistance combined with fast switching speed and low input capacitance
  • ESD protected structure with fully lead-free, RoHS compliant, and halogen/antimony free construction

Applications

  • General purpose interfacing switch
  • Power management functions in portable devices
  • High efficiency load switching circuits

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the component meets AEC-Q100/101/200 automotive qualification requirements if intended for automotive use, as standard production may not include these specific change controls without explicit manufacturer confirmation.

Selection Notes

Select this component for applications requiring a compact dual N-channel solution within a V-DFN2050-4 footprint. Ensure the gate drive voltage supports the RDS(ON) specifications at either 2.5V or 4.5V thresholds. Evaluate thermal performance against the 136°C/W junction-to-ambient resistance for standard PCB layouts versus the 60°C/W rating for optimized copper heat sinking.

Part Context

This part belongs to the DMN2024U series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other variants in the family but utilizes the V-DFN2050-4 package instead of larger footprints like UFX or UFDFQ. The series targets low-voltage, high-current switching needs in space-constrained designs.

Replacement Considerations

Check for direct pin-compatible alternatives such as the DMN2024UFDFQ-7 or DMN2024UVTQ-13. Verify that substitute parts maintain the same 20V BVDSS rating and comparable RDS(ON) values at the target gate drive voltages.

DMN2024UFX-7DMN2024UFX-7
$0.17
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