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The DMN2024UFX-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a V-DFN2050-4 case with a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) rating of ±10V. The device provides a continuous drain current (ID) of 8A at TC = +25°C, reducing to 6A at TC = +70°C. Maximum static drain-source on-resistance (RDS(ON)) is specified at 22mΩ when VGS = 4.5V and ID = 4A, or 26mΩ when VGS = 2.5V and ID = 4A. Total power dissipation reaches 0.92W on FR-4 substrate with minimum pad layout, and 2.1W with a 1-inch square copper plate. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging format. Confirm that the component meets AEC-Q100/101/200 automotive qualification requirements if intended for automotive use, as standard production may not include these specific change controls without explicit manufacturer confirmation.
Select this component for applications requiring a compact dual N-channel solution within a V-DFN2050-4 footprint. Ensure the gate drive voltage supports the RDS(ON) specifications at either 2.5V or 4.5V thresholds. Evaluate thermal performance against the 136°C/W junction-to-ambient resistance for standard PCB layouts versus the 60°C/W rating for optimized copper heat sinking.
This part belongs to the DMN2024U series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other variants in the family but utilizes the V-DFN2050-4 package instead of larger footprints like UFX or UFDFQ. The series targets low-voltage, high-current switching needs in space-constrained designs.
Check for direct pin-compatible alternatives such as the DMN2024UFDFQ-7 or DMN2024UVTQ-13. Verify that substitute parts maintain the same 20V BVDSS rating and comparable RDS(ON) values at the target gate drive voltages.