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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6.2A 8TSSOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.2A (Ta), 15.2A (Tc)
- Rds On (Max) @ Id, Vgs：24mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：647pF @ 10V
- Power - Max：890mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The DMN2024UTS-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSSOP-8 package and operates with a drain-source voltage (VDSS) of 20V. The device provides a maximum continuous drain current (ID) of 6.2A at TA = +25°C, with an on-state resistance (RDS(ON)) of 24mΩ at VGS = 4.5V and 28mΩ at VGS = 2.5V. Key electrical parameters include a gate-source voltage (VGSS) rating of ±10V, a gate threshold voltage (VGS(TH)) ranging from 0.35V to 0.95V, and a total power dissipation (PD) of 0.89W at TA = +25°C. The component supports an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration designed for high-efficiency power management applications
- Low on-state resistance (RDS(ON)) combined with superior switching performance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant construction
Applications
- Battery Management Systems
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging format containing 2500 units per reel. Confirm that the required automotive qualification standards, such as AEC-Q100 or PPAP capability, are explicitly requested through official channels if needed, as standard production may not inherently include these certifications without specific designation.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-voltage power paths. Ensure the application gate drive voltage aligns with the specified RDS(ON) test conditions of 2.5V or 4.5V to achieve optimal conduction losses. Verify thermal management requirements against the junction-to-ambient thermal resistance values provided in the datasheet for the intended PCB copper layout.
Part Context
This part belongs to the DMN2024 series of dual N-channel MOSFETs produced by Diodes Incorporated. The 'UTS' designation indicates the TSSOP-8 surface-mount package type. The '-13' suffix specifically denotes the tape and reel packaging configuration used for automated assembly processes.
Replacement Considerations
Consult the manufacturer's official documentation for verified equivalent parts. Cross-referencing requires matching VDSS, ID, RDS(ON), and package dimensions.
