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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7A TSOT23-6
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta)
- Rds On (Max) @ Id, Vgs：24mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：647pF @ 10V
- Power - Max：1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-23-6
- Grade：-
- Qualification：-
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Overview
The DMN2024UVT-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 surface-mount package and operates with a drain-source voltage (VDS) of 20 V and a gate-source voltage (VGSS) of ±10 V. The device provides a maximum continuous drain current (ID) of 7 A at +25°C, dropping to 5 A at +70°C. Static drain-source on-resistance (RDS(ON)) is rated at 24 mΩ max at VGS = 4.5 V and 28 mΩ max at VGS = 2.5 V. Total power dissipation is 1.0 W in steady state on FR-4 PCBs. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Low input capacitance and fast switching speed
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS40961 Rev. 4. Confirm the part number suffix matches the specific tape and reel packaging requirements. Ensure compliance with environmental directives such as RoHS 2 and RoHS 3 before final procurement integration.
Selection Notes
Select this component when a low-profile N-channel MOSFET with a 20 V rating is required. Consider the TSOT26 package dimensions for space-constrained designs. Evaluate thermal performance based on the specified junction-to-ambient resistance values under different PCB copper coverage conditions.
Part Context
This component belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed to minimize on-state resistance while maintaining superior switching performance. The product is classified as a 'Green' device, being halogen and antimony free.
Replacement Considerations
Consult the manufacturer's documentation for qualified alternatives. Verify pinout compatibility and electrical parameters such as RDS(ON), VDS, and package dimensions before substituting.
