DMN2024UVT-7

Overview

The DMN2024UVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 surface-mount package. It features a drain-source voltage rating of 20V and a continuous drain current of 7A at +25°C. The device exhibits a maximum on-resistance of 24mΩ at VGS = 4.5V and 28mΩ at VGS = 2.5V. Key electrical parameters include a gate threshold voltage ranging from 0.5V to 0.9V, total gate charge of 7.1nC, and input capacitance of 647pF. Operating temperatures span from -55°C to +150°C with a power dissipation of 1.0W.

Feature Summary

• Dual N-channel configuration integrated into a compact TSOT26 package for space-constrained designs.
• Optimized low on-state resistance to support high-efficiency power management applications.
• Fast switching speed combined with low input/output leakage characteristics.
• ESD protected gate structure ensuring robustness against electrostatic discharge events.

Applications

• Backlighting circuits
• DC-DC converters
• Power management functions

Procurement Notes

Verify the specific ordering suffix when purchasing. The -7 suffix indicates a tape and reel packaging format containing 3000 units per reel. Confirm that the component meets RoHS compliance standards and is halogen-free if required by your manufacturing specifications. Ensure the supplier provides official datasheets matching document number DS40961 Rev. 4 - 2 for accurate technical validation.

Selection Notes

Select this component for applications requiring a 20V N-channel MOSFET with a 7A continuous current capability. The low RDS(ON) makes it suitable for efficient power switching. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction. Consider the thermal resistance values provided for both minimum pad layouts and high-coverage copper boards when designing the PCB heat dissipation strategy.

Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a TSOT26 case constructed from molded plastic with a matte tin finish on the terminals. The device is designed to minimize self-heating effects through short duration pulse testing methods during characterization.

Replacement Considerations

Direct substitutes must match the 20V rating, dual N-channel topology, and TSOT26 footprint. Verify that any alternative component offers comparable RDS(ON) values at similar gate voltages and maintains equivalent thermal performance within the -55°C to +150°C operating range.

FAQ

What is the maximum continuous drain current for the DMN2024UVT-7?

The maximum continuous drain current is 7.0A at an ambient temperature of +25°C and reduces to 5.0A at +70°C.

Does the DMN2024UVT-7 have an internal body diode?

Yes, the device includes a maximum continuous body diode forward current rating of 2.3A.

What is the typical turn-on delay time for this MOSFET?

The typical turn-on delay time is 98ns under test conditions of VDS = 10V, VGS = 4.5V, RL = 10Ω, and RG = 6Ω.