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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：486pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN2025UFDB-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a 0.6mm profile and a PCB footprint of 4mm². The device provides a drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 6.0A at TA = +25°C. Maximum on-resistance (RDS(ON)) is specified at 25mΩ @ VGS = 4.5V and 31mΩ @ VGS = 2.5V. Key electrical parameters include a gate threshold voltage (VGS(TH)) range of 0.5V to 1.0V, total gate charge (Qg) of 5.9nC @ VGS = 4.5V, and a maximum junction temperature of +150°C.
Feature Summary
- Dual N-channel configuration in a compact U-DFN2020-6 package
- Low on-state resistance for high efficiency power management
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Battery Management Systems
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format when placing orders. Confirm that the component meets all applicable environmental directives, including RoHS 2, RoHS 3, and halogen/antimony-free requirements. Ensure compatibility with the U-DFN2020-6 (Type B) mechanical dimensions and recommended pad layout during the procurement phase.
Selection Notes
Select this component for applications requiring low-profile dual N-channel switching within a 20V limit. The 4mm² footprint makes it suitable for space-constrained designs. Verify that the required gate drive voltage supports the specified RDS(ON) thresholds at 4.5V or 2.5V. Consider the thermal resistance characteristics and ensure adequate copper area on the PCB to maintain junction temperatures within the -55°C to +150°C operating range.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It shares the U-DFN2020-6 package form factor with other devices in the family but is distinguished by its specific 20V breakdown voltage and current handling capabilities. The '-13' suffix indicates the standard 10k reel packaging variant used for high-volume manufacturing integration.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-referencing should focus on matching the U-DFN2020-6 package, 20V BVDSS rating, and dual N-channel configuration to ensure pinout and electrical compatibility.
