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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：25mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：486pF @ 10V
- Power - Max：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN2025UFDB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of 20V and a continuous drain current (ID) of 6.0A at +25°C. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 25mΩ at VGS = 4.5V and 31mΩ at VGS = 2.5V. Total gate charge (Qg) is 5.9nC at VGS = 4.5V and 12.3nC at VGS = 10V. The component operates within a temperature range of -55°C to +150°C and utilizes a U-DFN2020-6 package with a 0.6mm profile.
Feature Summary
- Dual N-channel configuration in a compact U-DFN2020-6 package
- Low on-state resistance for high efficiency power management
- ESD protected gate structure
- Fast switching speed capabilities
Applications
- Battery Management Systems
- DC-DC Converters
- General Power Management Functions
Procurement Notes
Verify the specific ordering suffix when purchasing, as the datasheet lists both DMN2025UFDB-7 (3000 units per tape and reel) and DMN2025UFDB-13 (10000 units per tape and reel). Confirm that the received components match the required packaging quantity and case type B specifications before integration into production lines.
Selection Notes
Select this component for applications requiring low profile surface mount solutions with high current handling capabilities. Ensure the design accounts for the thermal resistance values provided for different mounting conditions. Verify that the gate drive voltage meets the minimum requirements to achieve the specified low RDS(ON) performance levels.
Part Context
This part belongs to the DMN series of dual N-channel MOSFETs from Diodes Incorporated. It shares the U-DFN2020-6 mechanical footprint with other devices in the family but differs in electrical ratings such as breakdown voltage and on-resistance. It serves as a discrete solution for compact power switching designs.
Replacement Considerations
Direct replacements must maintain the 20V rating, dual N-channel configuration, and U-DFN2020-6 package dimensions. Verify that any substitute device meets or exceeds the 6.0A continuous drain current and 25mΩ maximum RDS(ON) specifications to ensure circuit compatibility.
