DMN2025UFDF-13

Single FETs, MOSFETs Overview

The DMN2025UFDF-13 is a 20V N-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a maximum drain-source on-resistance of 25mΩ at VGS=4.5V and 31mΩ at VGS=2.5V, supporting a continuous drain current of 6.5A at TA=+25°C. The device has a gate-source voltage rating of ±10V, a total power dissipation of 0.7W (TA=+25°C), and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Designed for low profile applications with a 0.6mm case height and a compact PCB footprint of 4mm².
• Optimized for high efficiency power management by minimizing on-state resistance while maintaining fast switching speeds.
• Features an ESD protected gate structure to enhance reliability during handling and operation.

Single FETs, MOSFETs Applications

• Battery Management Systems
• Power Management Functions
• DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 13-inch reel quantity of 10,000 units as defined in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance requirements if necessary for your assembly process. Ensure the U-DFN2020-6 package dimensions align with your PCB layout specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 20V N-channel MOSFET with a 0.6mm profile is required for space-constrained designs. It is suitable for applications needing low on-resistance at standard logic gate drive voltages like 4.5V or 2.5V. Consider its thermal characteristics and power dissipation limits relative to your expected operating currents and ambient temperatures.

Single FETs, MOSFETs Part Context

This part belongs to Diodes Incorporated's DMN series of N-channel enhancement mode MOSFETs. These devices are engineered for general-purpose switching and power management tasks. The DMN2025UFDF variant specifically targets low-profile surface mount applications requiring robust performance in a small form factor.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists from Diodes Incorporated for verified alternatives. Do not assume cross-compatibility with other manufacturers' parts without verifying pinout, electrical parameters, and package dimensions against the original datasheet.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage (VGSS) is rated at ±10V.

Is this component suitable for automotive applications?

For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated directly as standard production may not include these specific certifications.