DMN2029UVT-7

$0.09

Description：MOSFET N-CH 6.8A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5f61a293d461 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

DMN2029UVT-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 6.8A TSOT26. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2029UVT-7

Description：MOSFET N-CH 6.8A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.1 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：646 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for DMN2029UVT-7

DMN2029UVT-7

Single FETs, MOSFETs Overview

The DMN2029UVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package with a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 6.8A at 25°C. The device exhibits low on-resistance, specified as 24mΩ max at VGS=4.5V and 32mΩ max at VGS=2.5V. Key electrical parameters include a gate threshold voltage ranging from 0.4V to 1.5V, total gate charge of 7.1nC, and input capacitance of 646pF. Operating temperatures range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Dual N-channel configuration integrated into a single TSOT26 package for space-efficient designs.
Optimized for high efficiency power management through minimized on-state resistance while maintaining superior switching performance.
Compliant with RoHS directives and manufactured using halogen-free and antimony-free green materials.

Single FETs, MOSFETs Applications

DC-DC Converters
Power Management Functions
Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Confirm that the component meets all applicable environmental compliance standards required for the target assembly process. Ensure the selected variant matches the exact thermal and electrical requirements of the design before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance in a compact dual MOSFET package. Evaluate the thermal resistance characteristics relative to the expected duty cycle and ambient temperature conditions. Consider the gate threshold voltage range when designing drive circuits to ensure reliable switching across the full operating temperature spectrum.

Single FETs, MOSFETs Part Context

This part belongs to the DMN series of N-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered to provide a balance between low conduction losses and fast switching speeds. The TSOT26 package allows for surface mount installation, supporting automated assembly processes commonly used in consumer electronics and industrial power supplies.