DMN2036UCB4-7

DMN2036UCB4-7

$0.73
  • Description:MOSFET 2N-CH X2-WLB1616
  • Series:-

SKU:a0201d18e050 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:MOSFET 2N-CH X2-WLB1616
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:12.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:1.45W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-XFBGA, WLBGA
  • Supplier Device Package:X2-WLB1616-4
  • Grade:-
  • Qualification:-

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DMN2036UCB4-7

Overview

The DMN2036UCB4-7 is an N-channel enhancement mode field MOSFET manufactured by Diodes Incorporated. It features a maximum source-source breakdown voltage of 24V and a continuous source current rating of 5A at +25°C. The device achieves a maximum static source-source on-resistance of 36mΩ at VGS = 4.5V and IS = 3.0A. It utilizes an X2-WLB1616-4 package with SnAgCu ball terminals, offering a thermal resistance junction-to-ambient of 86.68°C/W and power dissipation of 1.45W at +25°C.

Feature Summary

  • Dual-source architecture designed for high-efficiency power management applications
  • Integrated gate-source protection diode providing 2kV HBM ESD tolerance
  • Halogen and antimony-free compliant green device construction

Applications

  • Battery management systems
  • Load switching circuits
  • Battery protection modules

Procurement Notes

Verify the specific ordering suffix '-7' to confirm the 3000-unit tape and reel packaging configuration. Ensure the component meets RoHS 2 and RoHS 3 directives if environmental compliance is required for the target assembly process. Confirm that the X2-WLB1616-4 package dimensions align with the designated PCB footprint and soldering profile requirements.

Selection Notes

Select this component when a low-profile dual-source MOSFET is required for space-constrained designs. The 24V rating suits single-cell lithium battery applications. Evaluate the 36mΩ on-resistance against the specific load current to ensure thermal performance remains within the 1.45W dissipation limit under steady-state conditions.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET portfolio, which prioritizes minimized on-state resistance while maintaining superior switching performance. The DMN2036UCB4-7 variant specifically targets portable consumer electronics where board space and battery life are critical design constraints.

Replacement Considerations

Direct substitutes include other dual-source N-channel MOSFETs in the X2-WLB1616-4 package with comparable 24V ratings and similar on-resistance specifications from the same manufacturer family.

DMN2036UCB4-7DMN2036UCB4-7
$0.73
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