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The DMN2036UCB4-7 is an N-channel enhancement mode field MOSFET manufactured by Diodes Incorporated. It features a maximum source-source breakdown voltage of 24V and a continuous source current rating of 5A at +25°C. The device achieves a maximum static source-source on-resistance of 36mΩ at VGS = 4.5V and IS = 3.0A. It utilizes an X2-WLB1616-4 package with SnAgCu ball terminals, offering a thermal resistance junction-to-ambient of 86.68°C/W and power dissipation of 1.45W at +25°C.
Verify the specific ordering suffix '-7' to confirm the 3000-unit tape and reel packaging configuration. Ensure the component meets RoHS 2 and RoHS 3 directives if environmental compliance is required for the target assembly process. Confirm that the X2-WLB1616-4 package dimensions align with the designated PCB footprint and soldering profile requirements.
Select this component when a low-profile dual-source MOSFET is required for space-constrained designs. The 24V rating suits single-cell lithium battery applications. Evaluate the 36mΩ on-resistance against the specific load current to ensure thermal performance remains within the 1.45W dissipation limit under steady-state conditions.
This part belongs to Diodes Incorporated's new generation MOSFET portfolio, which prioritizes minimized on-state resistance while maintaining superior switching performance. The DMN2036UCB4-7 variant specifically targets portable consumer electronics where board space and battery life are critical design constraints.
Direct substitutes include other dual-source N-channel MOSFETs in the X2-WLB1616-4 package with comparable 24V ratings and similar on-resistance specifications from the same manufacturer family.