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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 7A 8SOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：7A
- Rds On (Max) @ Id, Vgs：26mOhm @ 6A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：562pF @ 10V
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The DMN2040LSD-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOP-8L surface-mount package with a drain-source voltage (VDSS) of 20 V and a gate-source voltage (VGSS) rating of ±12 V. The device supports a steady-state drain current of 7.0 A at 25°C and delivers a maximum pulsed drain current of 30 A. Static drain-source on-resistance (RDS(on)) is specified at 26 mΩ at VGS = 4.5V and 36 mΩ at VGS = 2.5V. Total power dissipation reaches 2 W, while thermal resistance from junction to ambient is 62.5 °C/W. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SOP-8L package
- Low on-resistance for efficient conduction
- Fast switching speed with low input capacitance
- Qualified to AEC-Q101 standards for high reliability
Applications
- Power management circuits requiring dual channel control
- Battery protection systems
- Motor control applications
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet DS31517 Rev. 4-2 to confirm electrical parameters and mechanical dimensions. Ensure the ordering suffix matches the required tape and reel packaging quantity. Cross-reference the marking information and lead finish specifications to guarantee compliance with project requirements before finalizing procurement.
Selection Notes
Select this component when a dual N-channel topology is required within a limited footprint. Evaluate the 20 V breakdown voltage and 7.0 A continuous current limits against circuit demands. Consider the thermal resistance and power dissipation capabilities for heat management strategies. Verify compatibility with standard SOP-8L pad layouts during the PCB design phase.
Part Context
This part belongs to the DMN2040LSD series of dual N-channel enhancement mode MOSFETs. It shares the same core semiconductor structure and electrical characteristics as the non-suffixed DMN2040LSD variant. The primary distinction lies in the specific packaging and handling configuration provided by the manufacturer.
Replacement Considerations
Direct substitutes include the DMN2040LSD without the ordering suffix. Verify pinout compatibility and thermal performance metrics before implementation.
