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DMN2040UVT-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 6.7A TSOT26 T&R. Review the specifications below when checking this part for your BOM.
The DMN2040UVT-13 is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 surface-mount package and operates with a drain-source voltage of 20V. The device provides a maximum on-resistance of 24mΩ at VGS=4.5V and 32mΩ at VGS=2.5V, supporting continuous drain currents of 6.7A and 5.8A respectively at +25°C. Key electrical parameters include a gate threshold voltage range of 0.4V to 1.5V, total gate charge of 7.5nC, and input capacitance of 667pF. It withstands junction temperatures from -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets current environmental compliance standards including RoHS 3 and halogen-free requirements before finalizing procurement specifications.
Select this component for applications requiring low RDS(ON) within a 20V rating envelope. Ensure the design accommodates the thermal characteristics, specifically the 104°C/W junction-to-ambient thermal resistance on standard FR-4 boards. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction performance.
This part belongs to the DMN2040 series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the TSOT26 case style, which is a molded plastic package with a tin finish over a copper leadframe. The device is designed to minimize on-state resistance while maintaining superior switching performance for modern electronic circuits.
Consult the official datasheet for direct pin-compatible alternatives within the same series. Verify that any substitute maintains identical voltage ratings, current capabilities, and package dimensions to ensure seamless integration without circuit redesign.
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