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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.7A
- Rds On (Max) @ Id, Vgs：40mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：713pF @ 10V
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN2041UFDB-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type B) surface-mount package. It features a maximum drain-source voltage of 20V and a gate-source voltage rating of ±12V. At TA = +25°C, the continuous drain current reaches 4.7A at VGS = 4.5V and 3.7A at VGS = 2.5V. The static drain-source on-resistance is specified as 40mΩ max at VGS = 4.5V and 65mΩ max at VGS = 2.5V. Total gate charge is 8nC at VGS = 4.5V and 15nC at VGS = 8V. Operating and storage temperatures range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration with integrated ESD protection diodes on both gates.
- Low profile design with a maximum height of 0.6mm for compact board layouts.
- Totally lead-free and fully RoHS compliant construction.
- Halogen and antimony free "Green" device manufacturing.
Applications
- Load Switch
- Power Management Functions
- Portable Power Adaptors
Procurement Notes
Verify the specific ordering suffix against official documentation before purchase. The suffix indicates packaging quantity; for example, -13 denotes a 10,000-unit tape and reel, while -7 indicates a 3,000-unit reel. Confirm that the component meets all required environmental standards and automotive qualification criteria if applicable to the target application.
Selection Notes
Select this component for applications requiring low on-state resistance and superior switching performance within a 20V system. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON). Verify thermal management requirements based on the junction-to-ambient thermal resistance and expected power dissipation levels under steady-state or pulsed conditions.
Part Context
This part belongs to the DMN2041 series of dual N-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the U-DFN2020-6 (Type B) case style, designed for high-efficiency power management. The device integrates two independent N-channel transistors with built-in gate protection diodes in a single compact footprint.
Replacement Considerations
Consult the manufacturer's official documentation for confirmed substitute part numbers. Cross-referencing requires matching electrical parameters such as BVDSS, RDS(ON), ID, and package dimensions to ensure functional compatibility without modification.
FAQ
What is the maximum continuous drain current at an ambient temperature of +70°C?
At TA = +70°C, the maximum continuous drain current decreases to 3.8A when VGS = 4.5V.
Does the device include internal protection circuitry?
Yes, the DMN2041UFDB includes ESD protected gates with integrated gate protection diodes for both channels.
What is the body diode reverse recovery time?
The typical body diode reverse recovery time is 6.6ns when tested at IS = 4.4A and dI/dt = 100A/μs.
