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DMN2046U-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 3.4A SOT23. Review the specifications below when checking this part for your BOM.
The DMN2046U-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 3.4A at +25°C. The device offers a maximum on-resistance of 72mΩ at VGS=4.5V and 110mΩ at VGS=2.5V. Packaged in SOT23, it supports a junction temperature range from -55°C to +150°C with a power dissipation of 0.76W.
Verify the component datasheet revision (DS37649 Rev. 2 - 2) matches the specific batch requirements. Confirm that the SOT23 package dimensions align with the PCB footprint design. Ensure compliance with RoHS and Halogen-free standards as specified in the manufacturer documentation before finalizing procurement specifications.
Select this component for circuits requiring a 20V N-channel MOSFET with low on-resistance. Consider the thermal resistance values when designing heat dissipation strategies. Verify that the gate threshold voltage meets the logic level requirements of the driving circuitry for reliable switching performance.
This part belongs to the DMN2046U series of N-channel enhancement mode MOSFETs. It is designed to balance low on-state resistance with fast switching capabilities. The product line targets portable electronics and power management systems where space efficiency and energy conservation are critical design parameters.
Check for compatible parts within the same series or equivalent electrical ratings. Ensure substitute components match the SOT23 package outline and pin configuration. Verify that alternative devices meet the required voltage, current, and thermal specifications for the intended application.
The maximum drain-source voltage (VDSS) is rated at 20V.
Yes, the gate is ESD protected, and the device includes an intrinsic body diode.
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