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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 2.6A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Rds On (Max) @ Id, Vgs：90mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：278pF @ 10V
- Power - Max：590mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package：TSOT-26
- Grade：-
- Qualification：-
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Overview
The DMN2046UVT-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package with a maximum drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 2.6A at +25°C. The device exhibits a maximum on-state resistance (RDS(ON)) of 90mΩ at VGS = 4.5V and 130mΩ at VGS = 2.5V. Key electrical parameters include a gate threshold voltage range of 0.4V to 1.4V, total gate charge of 3.6nC at VGS = 4.5V, and an operating temperature range from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact TSOT26 package
- Low on-state resistance for high efficiency power management
- Fast switching speed with low input capacitance
- ESD protected gate structure
Applications
- Backlighting circuits
- DC-DC converters
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm RoHS compliance status and environmental declarations directly with the manufacturer or authorized distributors before procurement. Ensure the component meets all applicable automotive quality standards if required for the target application.
Selection Notes
Select this component for applications requiring dual N-channel MOSFETs with low RDS(ON) and fast switching characteristics. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance values under different mounting conditions. Verify that the gate drive voltage aligns with the specified RDS(ON) test conditions for optimal conduction losses.
Part Context
This part belongs to the DMN2046U series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMN2046UVT variant specifically utilizes the TSOT26 surface-mount package for space-constrained designs.
Replacement Considerations
Consult the official datasheet for direct pin-compatible alternatives within the same product family. Verify that any substitute component matches the 20V BVDSS rating, TSOT26 package dimensions, and electrical characteristics such as RDS(ON) and Qg.
