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DMN2050L-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 5.9A SOT23-3. Review the specifications below when checking this part for your BOM.
The DMN2050L-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 5.9A. The device offers low on-resistance, specified as 29mΩ at VGS=4.5V, 50mΩ at VGS=2.5V, and 100mΩ at VGS=2.0V. Total power dissipation is rated at 1.4W with a thermal resistance of 90°C/W. It operates within a temperature range of -55°C to +150°C and is housed in a SOT-23 package.
Verify the component against the official Diodes Incorporated datasheet DS31502 Rev. 4. Confirm the part number suffix matches the specific packaging requirements. Ensure compliance with RoHS and halogen-free specifications if required by the design. Check assembly site markings for origin verification.
Select this component for applications requiring low on-resistance and fast switching in a compact SOT-23 package. Consider the 20V drain-source voltage limit and 5.9A continuous current rating when designing the circuit. Evaluate thermal performance based on the 1.4W power dissipation and 90°C/W thermal resistance values.
This component belongs to the DMN2050L series of N-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for surface mount applications using a SOT-23 case. The series emphasizes high reliability and low power loss characteristics suitable for portable electronics and battery-powered devices.
Consult the manufacturer's documentation for verified substitute part numbers. Cross-reference electrical parameters such as voltage ratings, current capabilities, and package dimensions before substitution.
The maximum drain-source voltage (VDSS) is 20V.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
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