DMN2050LFDB-13

$0.55

Description：MOSFET 2N-CH 20V 3.3A 6UDFN
Series：-

SKU:ee5b2a88afb3 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 3.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.3A
Rds On (Max) @ Id, Vgs：45mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：389pF @ 10V
Power - Max：730mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：-
Qualification：-

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DMN2050LFDB-13

Overview

The DMN2050LFDB-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 case with a maximum drain-source voltage (BVDSS) of 20V. The device provides low on-state resistance, specified as a maximum of 45mΩ at VGS = 4.5V and ID = 5.0A, or 55mΩ at VGS = 2.5V and ID = 4.2A. Continuous drain current reaches 4.5A at TA = +25°C. Total gate charge is typically 5.7nC at VGS = 4.5V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration for compact power management solutions
Optimized for high efficiency through minimized on-state resistance
Fast switching speed supported by low input capacitance
Low input/output leakage characteristics

Applications

Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix '-13' against official documentation to confirm the 10,000-unit tape and reel packaging format. Ensure that the component meets all applicable RoHS and halogen-free requirements as defined by the manufacturer's quality standards before finalizing procurement specifications.

Selection Notes

Select this component when a dual N-channel topology is required within a U-DFN2020-6 footprint. Evaluate the 45mΩ RDS(ON) specification against circuit load requirements at the intended gate drive voltage. Confirm thermal dissipation capabilities align with the application's ambient temperature constraints.

Part Context

This part belongs to the DMN2050LFDB series of dual N-channel enhancement mode MOSFETs. It shares the same internal schematic and electrical characteristics with the DMN2050LFDB-7 variant, differing only in the standard manufacturing packaging quantity provided by Diodes Incorporated.

Replacement Considerations

The DMN2050LFDB-7 is a confirmed substitute offering identical electrical performance and package dimensions. Verify that the alternative supplier's packaging format matches the assembly line requirements.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.