DMN2050LFDB-7

$0.55

Description：MOSFET 2N-CH 20V 3.3A 6UDFN
Series：-

SKU:e4a1b70e6367 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 3.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.3A
Rds On (Max) @ Id, Vgs：45mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：389pF @ 10V
Power - Max：730mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：-
Qualification：-

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DMN2050LFDB-7

Overview

The DMN2050LFDB-7 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 case with a maximum drain-source voltage (BVDSS) of 20V and a gate-source voltage (VGSS) of ±12V. The device provides a maximum continuous drain current (ID) of 4.5A at +25°C and 3.6A at +70°C. Static drain-source on-resistance (RDS(ON)) is rated at a maximum of 45mΩ at VGS = 4.5V and 55mΩ at VGS = 2.5V. Total power dissipation reaches 1.42W at +25°C, supported by a thermal resistance (RθJA) of 89°C/W.

Feature Summary

Dual N-channel configuration designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Low input capacitance and fast switching speed characteristics that support rapid signal transitions in compact circuit designs.
Totally lead-free and fully RoHS compliant construction, ensuring compliance with environmental directives including halogen and antimony free standards.

Applications

Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix when sourcing components. The -7 suffix indicates packaging in 3,000-unit tape and reels, whereas the -13 suffix denotes 10,000-unit reels. Confirm package type B specifications match design requirements before finalizing procurement orders.

Selection Notes

Select this component for circuits requiring low on-resistance within a 20V limit. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance. Evaluate thermal constraints carefully, as the U-DFN2020-6 package relies heavily on PCB copper area for effective heat dissipation during operation.

Part Context

This part belongs to the DMN2050LFDB series of dual N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 Type B mechanical case, which offers a compact footprint suitable for space-constrained portable electronics and modern power management systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings against existing designs if considering alternative manufacturers or different package types.