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DMN2050LQ-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 5.9A SOT23. Review the specifications below when checking this part for your BOM.
The DMN2050LQ-7 is an N-channel enhancement mode MOSFET in a SOT-23 package. It features a drain-source voltage of 20V and a continuous drain current of 5.9A at +25°C. The maximum on-resistance is 29mΩ at VGS=4.5V and 50mΩ at VGS=2.5V. Gate-source voltage is ±12V, with a threshold voltage max of 1.4V. Total gate charge is 6.7nC. Power dissipation is 1.4W, thermal resistance junction-to-ambient is 90°C/W, and operating temperature range is -55°C to +150°C.
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental directives relevant to the target market. Ensure the supplier provides valid traceability documentation for automotive-grade parts. Cross-reference the datasheet revision to confirm electrical characteristics align with design requirements.
Select this component when a 20V N-channel MOSFET with low on-resistance is required for automotive or general-purpose applications. Consider the SOT-23 package constraints for thermal management and board space. Evaluate the gate charge and threshold voltage against the driving circuit capabilities to ensure optimal switching performance.
This part belongs to the DMN2050LQ series from Diodes Incorporated. It is designed specifically to meet stringent automotive application requirements. The device utilizes silicon technology and is housed in a standard SOT-23 surface-mount case.
Consult official manufacturer substitution lists for verified equivalents. Verify pinout compatibility and electrical parameter margins before replacing.
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