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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 4.6A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
- Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V
- Power - Max：820mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2020-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMN2053UFDB-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 package with a maximum height of 0.6mm and a PCB footprint of 4mm². The device provides a drain-source voltage (BVDSS) of 20V and continuous drain current (ID) up to 4.6A at +25°C. On-resistance (RDS(ON)) is specified as 35mΩ max at VGS=4.5V and 43mΩ max at VGS=2.5V. Total gate charge (Qg) is 3.6nC at VGS=4.5V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact U-DFN2020-6 package
- Optimized for low on-state resistance and superior switching performance
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Load switches
- Power management functions
- Portable power adaptors
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the component meets the required environmental standards, specifically RoHS 2, RoHS 3, and the 'Green' device definition regarding bromine, chlorine, and antimony content limits. Ensure the procurement channel is authorized to guarantee product authenticity and compliance with standard terms of sale.
Selection Notes
Select this component when a dual N-channel MOSFET with a small 4mm² footprint is required. Evaluate the RDS(ON) specifications against the system's gate drive voltage levels, particularly at 2.5V or 4.5V. Consider the thermal resistance values based on the intended PCB copper area and mounting conditions to ensure safe operation within the -55°C to +150°C junction temperature range.
Part Context
This part belongs to the DMN2053 series of dual N-channel enhancement mode MOSFETs. It shares electrical characteristics with the automotive-compliant variant DMC2053UFDBQ but utilizes a standard commercial-grade datasheet. The device is designed to minimize on-state resistance while maintaining high switching efficiency for power management applications.
Replacement Considerations
The automotive-compliant version DMC2053UFDBQ-13 offers identical electrical specifications but adheres to AEC-Q101 standards. Verify if the application requires automotive qualification before substituting.
