DMN2053UVTQ-13

$0.08

Description：MOSFET 2N-CH 20V 4.6A TSOT26
Series：-

SKU:a655fe9205b5 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 4.6A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
Rds On (Max) @ Id, Vgs：35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：369pF @ 10V
Power - Max：700mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-23-6 Thin, TSOT-23-6
Supplier Device Package：TSOT-26
Grade：Automotive
Qualification：AEC-Q101

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DMN2053UVTQ-13

Overview

The DMN2053UVTQ-13 is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 package and operates with a drain-source voltage of 20V. At VGS=4.5V, the on-resistance is 35mΩ with a continuous drain current of 4.6A. At VGS=2.5V, the resistance is 43mΩ with a current of 4.2A. The device has a gate threshold voltage of 0.4V to 1.0V and a total gate charge of 3.6nC. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual N-channel configuration in a compact TSOT26 package
Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
Suitable for automotive applications requiring specific change control

Applications

Backlighting
DC-DC Converters
Power Management Functions

Procurement Notes

Verify the component against the official datasheet DS41733 Rev. 2-2. Confirm the part number suffix matches the required tape and reel quantity. Ensure compliance with RoHS and AEC-Q101 standards if used in automotive contexts. Check for IATF 16949 certification requirements.

Selection Notes

Select this component for applications requiring dual N-channel MOSFETs in a small footprint. Consider the 20V rating and low on-resistance at various gate voltages. Evaluate thermal performance based on the specified junction-to-ambient resistance values.

Part Context

This part belongs to the DMN2053UVTQ series of dual N-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining superior switching performance. The device is suitable for high-efficiency power management applications.

Replacement Considerations

Check for direct replacements within the same family or similar packages. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(ON). Ensure the replacement meets the same automotive and environmental standards.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.