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DMN2055U-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 20V 4.8A SOT23 T&R 1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for DMN2055U-13
- Description：MOSFET N-CH 20V 4.8A SOT23 T&R 1
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：38mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：800mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for DMN2055U-13
Single FETs, MOSFETs Overview
The DMN2055U-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT-23 package. It features a drain-source voltage (V_DSS) of 20 V and a continuous drain current (I_D) of 4.8 A at +25°C. The maximum on-resistance (R_DS(ON)) is 38 mΩ at V_GS = 4.5 V with I_D = 3.6 A, and 45 mΩ at V_GS = 2.5 V with I_D = 3.1 A. Total gate charge (Q_G) is typically 4.3 nC. Operating temperature range spans from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Totally lead-free and fully RoHS compliant, halogen and antimony free green device.
Single FETs, MOSFETs Applications
- General purpose interfacing switch
- Power management functions
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets all applicable environmental directives including RoHS 2 and RoHS 3 requirements before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a low-voltage N-channel MOSFET with high current capability in a compact SOT-23 package is required. Ensure the application gate drive voltage supports the specified R_DS(ON) conditions at either 4.5 V or 2.5 V. Verify thermal constraints align with the junction-to-ambient thermal resistance values provided for the target PCB layout.
Single FETs, MOSFETs Part Context
This part belongs to the DMN2055U series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. The product utilizes silicon technology and is housed in a standard SOT-23 surface-mount case. It is designed for general-purpose switching and power management tasks requiring low on-resistance and fast switching speeds.
Single FETs, MOSFETs Replacement Considerations
The datasheet lists DMN2055U-7 as an equivalent part number differing only in packaging quantity (3,000 units per tape and reel versus 10,000 units). No other substitute part numbers are documented in the official source material.
Single FETs, MOSFETs FAQ
What is the maximum pulsed drain current for the DMN2055U?
The maximum pulsed drain current is 25 A, measured with a 10μs pulse duration and a duty cycle of 1%.
Does the DMN2055U support automotive applications?
The provided datasheet does not list AEC-Q101 qualification for the DMN2055U. Automotive-grade alternatives within the manufacturer's portfolio may require separate verification.
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