DMN2055UQ-13

$0.05

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:6e2f70065b8c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

DMN2055UQ-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET BVDSS: 8V~24V SOT23 T&R 1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for DMN2055UQ-13

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：38mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for DMN2055UQ-13

DMN2055UQ-13

Single FETs, MOSFETs Overview

The DMN2055UQ-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 package. It features a drain-source voltage (BVDSS) of 20V and a maximum continuous drain current (ID) of 4.8A at +25°C. The static drain-source on-resistance (RDS(ON)) is specified as 38mΩ max at VGS = 4.5V and 45mΩ max at VGS = 2.5V. Total gate charge (QG) is typically 4.3nC, with turn-on delay time at 2.8ns and turn-off delay time at 15.4ns. The device operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Totally lead-free and fully RoHS compliant
Halogen and antimony free green device
Suitable for automotive applications requiring specific change control
AEC-Q101 qualified and PPAP capable

Single FETs, MOSFETs Applications

General purpose interfacing switches
Power management functions

Single FETs, MOSFETs Procurement Notes

Verify the ordering suffix matches the required packing quantity, as the DMN2055UQ-13 indicates a 10,000-unit tape and reel carrier. Confirm that the component meets AEC-Q101 qualification requirements if the design targets automotive environments. Ensure the selected part number aligns with the specific packaging needs of the assembly line. Cross-reference datasheet revision DS43668 Rev. 2-2 for accurate electrical parameters during final validation.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and fast switching are critical for high-efficiency power management. The SOT23 package provides a compact solution for space-constrained designs. Consider the 20V breakdown voltage and 4.8A current rating to ensure adequate headroom for the target application. Verify thermal performance against the specified junction-to-ambient resistance values under expected operating conditions.

Single FETs, MOSFETs Part Context

This single N-channel MOSFET belongs to the DMN2055UQ series designed to minimize on-state resistance while maintaining superior switching performance. It is manufactured in IATF 16949 certified facilities. The device utilizes a molded plastic package with matte tin annealed terminals over a copper leadframe. Moisture sensitivity is rated Level 1 per J-STD-020 standards.